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RTP Electro Opitcal Devices
  • RTP Electro Opitcal DevicesRTP Electro Opitcal Devices
  • RTP Electro Opitcal DevicesRTP Electro Opitcal Devices

RTP Electro Opitcal Devices

Periti sumus in campo RTP Electro Opitcali machinae. Periti sumus in agro RTP Electro machinae Opitcales. Coupletech praebet RTP EO Q-Switches. RTP Electro-Opitcal machinae est crystallus isomorphus sicut KTP crystallus, qui in applicationibus nonlinearibus et Electro-Opticis adhibetur. Limen damnum maius habet (circiter 1.8 temporibus KTP), altum resistivity et in alta rate repetitionis adhiberi potest, nullum hygroscopicum et nullum effectum piezo-electrici. Bonae perspicuitatis opticae ab circa 400nm ad super 4µm notat et maxime pro laseris intra-cavitatis operatione, RTP EO machinae summo resistunt damno optici cum potentia tractandi fere 1GW/cm2 pro 1ns pulsus ad 1064nm. Tota range tradenda est ab 350 ad 4500nm.

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Productum attributa RTP Electro Opitcal machinae


Exemplar No.:
CPRPC-08
Notam:
COUPLETECH
Angulum secans:
X-cut,Y-cutm
Medium Undo Voltages:
3000V Pro 8x8x(10+10) Ad 1064n
Apertura Available:
2, 3, 4, 5, 6, 7, 8, 9, 10mm



Supple Facultates & informationes additional RTP Electro Opitcal machinae


Packaging:
Vacuum packaging
Uber:
1000pcs anno
Transportatio:
Oceanus, Terra, Air
Locus originis:
China
Facultates copia:
100pcs per mensem
Testimonium:
ISO9001
HS Codicis;
9013901000
Payment Type:
T/T
Incoterm:
FOB,CIF,EXW
Tempus adferendi:
XXX diebus

Packaging & Delivery of RTP Electro Opitcal Devices


Vendere Unitates: Sacculi / Sacculi

Sarcina Type: Vacuum packaging


Periti sumus in campo RTP Electro Fabricae Opitcal. Coupletech praebet RTP EO Q-Switches. RTP Electro-Opitcal machinae est crystallus isomorphus sicut KTP crystallus, qui in applicationibus nonlinearibus et Electro-Opticis adhibetur. Limen damnum maius habet (circiter 1.8 temporibus KTP), altum resistivity et in alta rate repetitionis adhiberi potest, nullum hygroscopicum et nullum effectum piezo-electrici. Bonae perspicuitatis opticae ab circa 400nm ad super 4µm notat et maxime pro laseris intra-cavitatis operatione, RTP EO machinae summo resistunt damno optici cum potentia tractandi fere 1GW/cm2 pro 1ns pulsus ad 1064nm. Tota range tradenda est ab 350 ad 4500nm.

RTP (Rubidium Titanyl Phosphateâ€" RbTiOPO4) bonum electro†crystalli optici pro varietate applicationum (qualis est Q†SWITCH, Amplitude & Phase Modulatores, Pulsus Pickers et sic in aliis.) et operatio in industrialis, medicinis. ac defensione producta. Crystallum diaphanum est maxime conspicuum communi et prope laser aequalitatem ultrarubrum. Bene laborat per amplissimum spatium temperaturae et ad iterationem valde altam. RTP subnixa Q†machinis switch offeruntur in par configurationibus, in temperatura compensante consilio. Cum adhibitis applicationibus ut Q†SWITCH et Amplitude Modulatores, crystallis multis modis ascenduntur, habitationem tantum ascendentem vel cylindricam, addito simplici modo insidentem, initus trabis polarizatur per diametrum faciei in crystallis RTP subnixis. .


RTP Commoda:
Princeps repetitio rate
Non-hygroscopic
Magnae coefficientes nonlineares optica et electro-optica
Humilis media unda voltage
Nulla Piezoelectric Ringing
alte limen damnum;

RTP parametri:
Transmissio ad 1064nm: >98.5%
Apertures Available: 2, 3, 4, 5, 6, 7, 8, 9, 10mm
Medium voltages ad undam 1064nm: 1000V (3x3x10+10)
Pockels Cell size: 20mm diameter pro 3x3 apertura, 4x4 apertura, 25.4mm diameter for5x5 foraminis
Confer rationem: >23dB
Angulus acceptionis: > 1°
Damnum Limen: >600MW/cm2 ad 1064nm 10ns
Stabilitas late temperatus range (-50â"ƒ â€" +70â"ƒ)
Coupletech novum consilium praebet, magna fides RTP EO machinae. Coupletech etiam multa genera EO Q virgarum praebet, ut BBO Cellulae Pockels, Cellulae signatae BBO Pockels, DKDP (KD*P) Pockels Cell, et LiNbO3 et MgO:LN Pockels Cell.
Looking for ideal RTP EO Devices Manufacturer & elit? Magnam electionem habemus in bonis pretiis ut te adiuvet creatrix. Omnes RTP EO Q SWITCH qualitatem praestatur. Nos Sina Origin of RTP Factory Substructio Q SWITCH PB. Si quaestionem habes, placet liberum contactus nos.



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